This work describes the features of the physical properties of the gallium’s antimonide doped
with nickel for a wide range of concentration, of up to 3% atoms and temperatures between (2 ÷ 300) K.
After the overall analysis of the galvanomagnetic, optic and irradiation effects, it becomes possible to
highlight, for the first time, a number of features of the physical properties determined by the interaction
between charge carriers and magnetic moment generated by the energy of uncompleted electronic structure
of the substrate 3d.
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