Knowledge of the physics properties of Gallium Antimonide (GaSb) is important because of the increasing application of GaSb in many optical and electronics applications. X-ray diffraction and electron micrographic analyses showed that GaSb‹Fe› and GaSb‹Mn› eutectic composites doped with 0.1% and 2,0% Fe atoms are perfective. The density of inclusion in GaSb‹Fe› composites increased about two times than undoped samples. Iron- oped gallium antimony thin films at concentrations in the range (0.1÷2.0) atomic% were obtained by laser ablation.
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